SIR470DP-T1-GE3
Nimewo Pati SIR470DP-T1-GE3
Manifakti Vishay Siliconix
Deskripsyon MOSFET N-CH 40V 60A PPAK SO-8
Kantite ki disponib 31246 pcs new original in stock.
Demann Stock ak sitasyon
ECAD modèl
Datasheets 1.SIR470DP-T1-GE3.pdf2.SIR470DP-T1-GE3.pdf3.SIR470DP-T1-GE3.pdf4.SIR470DP-T1-GE3.pdf
SIR470DP-T1-GE3 Price Mande Pri & Tan Lead Online
or Email us: Info@ariat-tech.com
Enfòmasyon teknik nan SIR470DP-T1-GE3
Nimewo Pati fabrikan an SIR470DP-T1-GE3 Kategori  
Manifakti Vishay / Siliconix Deskripsyon MOSFET N-CH 40V 60A PPAK SO-8
Pake / Ka PowerPAK® SO-8 Kantite ki disponib 31246 pcs
Vgs (th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V
Teknoloji MOSFET (Metal Oxide) Founisè Aparèy pake PowerPAK® SO-8
Seri TrenchFET® Rds Sou (Max) @ Id, Vgs 2.3mOhm @ 20A, 10V
Dissipasyon pouvwa (Max) 6.25W (Ta), 104W (Tc) Pake / Ka PowerPAK® SO-8
Pakèt Tape & Reel (TR) Operating Tanperati -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Kapasite Antre (Ciss) (Max) @ Vds 5660 pF @ 20 V
Pòtay Charge (Qg) (Max) @ Vgs 155 nC @ 10 V Fèt tip N-Channel
FET Feature - Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V
Drenaj Sous Voltage (Vdss) 40 V Kouran - Kontini Drain (Id) @ 25 ° C 60A (Tc)
Nimewo pwodwi baz SIR470  
DownloadSIR470DP-T1-GE3 PDF - EN.pdf
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SIR470DP-T1-GE3 Imaj SIR470DP-T1-GE3 Foto SIR470DP-T1-GE3 PDF
SIR470DP-T1-GE3 DatasheetRale dosye SIR470DP-T1-GE3 FòmManifakti Vishay / Siliconix
Pati ki gen rapò ak SIR470DP-T1-GE3
Imaj Nimewo Pati Deskripsyon Manifakti PDF Jwenn yon Quote
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