SI1539CDL-T1-GE3
Nimewo Pati SI1539CDL-T1-GE3
Manifakti Vishay Siliconix
Deskripsyon MOSFET N/P-CH 30V SOT363
Kantite ki disponib 4800 pcs new original in stock.
Demann Stock ak sitasyon
ECAD modèl
Datasheets 1.SI1539CDL-T1-GE3.pdf2.SI1539CDL-T1-GE3.pdf
SI1539CDL-T1-GE3 Price Mande Pri & Tan Lead Online
or Email us: Info@ariat-tech.com
Enfòmasyon teknik nan SI1539CDL-T1-GE3
Nimewo Pati fabrikan an SI1539CDL-T1-GE3 Kategori  
Manifakti Vishay / Siliconix Deskripsyon MOSFET N/P-CH 30V SOT363
Pake / Ka SC-70-6 Kantite ki disponib 4800 pcs
Vgs (th) (Max) @ Id 2.5V @ 250µA Teknoloji MOSFET (Metal Oxide)
Founisè Aparèy pake SC-70-6 Seri TrenchFET®
Rds Sou (Max) @ Id, Vgs 388mOhm @ 600mA, 10V Pouvwa - Max 340mW
Pake / Ka 6-TSSOP, SC-88, SOT-363 Pakèt Tape & Reel (TR)
Operating Tanperati -55°C ~ 150°C (TJ) Mounting Kalite Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 28pF @ 15V Pòtay Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
FET Feature Logic Level Gate Drenaj Sous Voltage (Vdss) 30V
Kouran - Kontini Drain (Id) @ 25 ° C 700mA, 500mA Konfigirasyon N and P-Channel
Nimewo pwodwi baz SI1539  
DownloadSI1539CDL-T1-GE3 PDF - EN.pdf
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Imaj Nimewo Pati Deskripsyon Manifakti PDF Jwenn yon Quote
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SI1539CDL-TI-GE3 VISHAY  
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