RGF1MHE3/67A
Nimewo Pati RGF1MHE3/67A
Manifakti Vishay General Semiconductor - Diodes Division
Deskripsyon DIODE GEN PURP 1KV 1A DO214BA
Kantite ki disponib 130000 pcs new original in stock.
Demann Stock ak sitasyon
ECAD modèl
Datasheets 1.RGF1MHE3/67A.pdf2.RGF1MHE3/67A.pdf3.RGF1MHE3/67A.pdf
RGF1MHE3/67A Price Mande Pri & Tan Lead Online
or Email us: Info@ariat-tech.com
Enfòmasyon teknik nan RGF1MHE3/67A
Nimewo Pati fabrikan an RGF1MHE3/67A Kategori Konektè, entèkonèkte
Manifakti Vishay General Semiconductor – Diodes Division Deskripsyon DIODE GEN PURP 1KV 1A DO214BA
Pake / Ka DO-214BA (GF1) Kantite ki disponib 130000 pcs
Voltage - Forward (Vf) (Max) @ Si 1.3 V @ 1 A Voltage - DC ranvèse (Vr) (Max) 1000 V
Teknoloji Standard Founisè Aparèy pake DO-214BA (GF1)
Vitès Fast Recovery =< 500ns, > 200mA (Io) Seri SUPERECTIFIER®
Tan rekiperasyon ranvèse (trr) 500 ns Pake / Ka DO-214BA
Pakèt Tape & Reel (TR) Operating Tanperati - Junction -65°C ~ 175°C
Mounting Kalite Surface Mount Kouran - Reverse Leakage @ Vr 5 µA @ 1000 V
Kouran - Mwayèn Rectified (Io) 1A Kapasite @ Vr, F 8.5pF @ 4V, 1MHz
Nimewo pwodwi baz RGF1  
DownloadRGF1MHE3/67A PDF - EN.pdf
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RGF1MHE3/67A Imaj RGF1MHE3/67A Foto RGF1MHE3/67A PDF
RGF1MHE3/67A DatasheetRale dosye RGF1MHE3/67A FòmManifakti Vishay General Semiconductor – Diodes Division
Pati ki gen rapò ak RGF1MHE3/67A
Imaj Nimewo Pati Deskripsyon Manifakti PDF Jwenn yon Quote
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