BSC096N10LS5ATMA1
Nimewo Pati BSC096N10LS5ATMA1
Manifakti Infineon Technologies
Deskripsyon MOSFET N-CH 100V 40A TDSON-8-6
Kantite ki disponib 5100 pcs new original in stock.
Demann Stock ak sitasyon
ECAD modèl
Datasheets 1.BSC096N10LS5ATMA1.pdf2.BSC096N10LS5ATMA1.pdf
BSC096N10LS5ATMA1 Price Mande Pri & Tan Lead Online
or Email us: Info@ariat-tech.com
Enfòmasyon teknik nan BSC096N10LS5ATMA1
Nimewo Pati fabrikan an BSC096N10LS5ATMA1 Kategori  
Manifakti Cypress Semiconductor (Infineon Technologies) Deskripsyon MOSFET N-CH 100V 40A TDSON-8-6
Pake / Ka PG-TDSON-8-6 Kantite ki disponib 5100 pcs
Vgs (th) (Max) @ Id 2.3V @ 36µA Vgs (Max) ±20V
Teknoloji MOSFET (Metal Oxide) Founisè Aparèy pake PG-TDSON-8-6
Seri OptiMOS™ 5 Rds Sou (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
Dissipasyon pouvwa (Max) 3W (Ta), 83W (Tc) Pake / Ka 8-PowerTDFN
Pakèt Tape & Reel (TR) Operating Tanperati -55°C ~ 175°C (TJ)
Mounting Kalite Surface Mount Kapasite Antre (Ciss) (Max) @ Vds 2100 pF @ 50 V
Pòtay Charge (Qg) (Max) @ Vgs 14.6 nC @ 4.5 V Fèt tip N-Channel
FET Feature - Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V
Drenaj Sous Voltage (Vdss) 100 V Kouran - Kontini Drain (Id) @ 25 ° C 40A (Tc)
Nimewo pwodwi baz BSC096  
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Imaj Nimewo Pati Deskripsyon Manifakti PDF Jwenn yon Quote
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