IPB048N15N5ATMA1
Nimewo Pati IPB048N15N5ATMA1
Manifakti Infineon Technologies
Deskripsyon MOSFET N-CH 150V 120A TO263-3
Kantite ki disponib 3054 pcs new original in stock.
Demann Stock ak sitasyon
ECAD modèl
Datasheets 1.IPB048N15N5ATMA1.pdf2.IPB048N15N5ATMA1.pdf3.IPB048N15N5ATMA1.pdf
IPB048N15N5ATMA1 Price Mande Pri & Tan Lead Online
or Email us: Info@ariat-tech.com
Enfòmasyon teknik nan IPB048N15N5ATMA1
Nimewo Pati fabrikan an IPB048N15N5ATMA1 Kategori  
Manifakti Cypress Semiconductor (Infineon Technologies) Deskripsyon MOSFET N-CH 150V 120A TO263-3
Pake / Ka PG-TO263-3-2 Kantite ki disponib 3054 pcs
Vgs (th) (Max) @ Id 4.6V @ 264µA Vgs (Max) ±20V
Teknoloji MOSFET (Metal Oxide) Founisè Aparèy pake PG-TO263-3-2
Seri OptiMOS™ Rds Sou (Max) @ Id, Vgs 4.8mOhm @ 60A, 10V
Dissipasyon pouvwa (Max) 300W (Tc) Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pakèt Tape & Reel (TR) Operating Tanperati -55°C ~ 175°C (TJ)
Mounting Kalite Surface Mount Kapasite Antre (Ciss) (Max) @ Vds 7800 pF @ 75 V
Pòtay Charge (Qg) (Max) @ Vgs 100 nC @ 10 V Fèt tip N-Channel
FET Feature - Kondwi Voltage (Max Rds sou, Min Rds sou) 8V, 10V
Drenaj Sous Voltage (Vdss) 150 V Kouran - Kontini Drain (Id) @ 25 ° C 120A (Tc)
Nimewo pwodwi baz IPB048  
DownloadIPB048N15N5ATMA1 PDF - EN.pdf
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Pati ki gen rapò ak IPB048N15N5ATMA1
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