| IDD06SG60CXTMA1 | |
|---|---|
| Nimewo Pati | IDD06SG60CXTMA1 |
| Manifakti | Infineon Technologies |
| Deskripsyon | DIODE SIL CARB 600V 6A TO252-3 |
| Kantite ki disponib | 2555 pcs new original in stock. Demann Stock ak sitasyon |
| ECAD modèl | |
| Datasheets | 1.IDD06SG60CXTMA1.pdf2.IDD06SG60CXTMA1.pdf3.IDD06SG60CXTMA1.pdf4.IDD06SG60CXTMA1.pdf5.IDD06SG60CXTMA1.pdf |
| IDD06SG60CXTMA1 Price |
Mande Pri & Tan Lead Online or Email us: Info@ariat-tech.com |
| Enfòmasyon teknik nan IDD06SG60CXTMA1 | |||
|---|---|---|---|
| Nimewo Pati fabrikan an | IDD06SG60CXTMA1 | Kategori | Konektè, entèkonèkte |
| Manifakti | Cypress Semiconductor (Infineon Technologies) | Deskripsyon | DIODE SIL CARB 600V 6A TO252-3 |
| Pake / Ka | PG-TO252-3 | Kantite ki disponib | 2555 pcs |
| Voltage - Forward (Vf) (Max) @ Si | 2.3 V @ 6 A | Voltage - DC ranvèse (Vr) (Max) | 600 V |
| Teknoloji | SiC (Silicon Carbide) Schottky | Founisè Aparèy pake | PG-TO252-3 |
| Vitès | No Recovery Time > 500mA (Io) | Seri | CoolSiC™+ |
| Tan rekiperasyon ranvèse (trr) | 0 ns | Pake / Ka | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Pakèt | Tape & Reel (TR) | Operating Tanperati - Junction | -55°C ~ 175°C |
| Mounting Kalite | Surface Mount | Kouran - Reverse Leakage @ Vr | 50 µA @ 600 V |
| Kouran - Mwayèn Rectified (Io) | 6A | Kapasite @ Vr, F | 130pF @ 1V, 1MHz |
| Nimewo pwodwi baz | IDD06SG60 | ||
| Download | IDD06SG60CXTMA1 PDF - EN.pdf | ||
Imèl nou: Info@Ariat-Tech.com oswa RFQ IDD06SG60CXTMA1 sou entènèt.
| IDD06SG60CXTMA1 Stock | IDD06SG60CXTMA1 Pri | IDD06SG60CXTMA1 Elektwonik | |||
| Eleman IDD06SG60CXTMA1 | IDD06SG60CXTMA1 Envantè | IDD06SG60CXTMA1 Digikey | |||
| Founisè IDD06SG60CXTMA1 | Lòd IDD06SG60CXTMA1 sou entènèt | Inquiry IDD06SG60CXTMA1 | |||
| IDD06SG60CXTMA1 Imaj | IDD06SG60CXTMA1 Foto | IDD06SG60CXTMA1 PDF | |||
| IDD06SG60CXTMA1 Datasheet | Rale dosye IDD06SG60CXTMA1 Fòm | Manifakti Cypress Semiconductor (Infineon Technologies) | |||
| Pati ki gen rapò ak IDD06SG60CXTMA1 | |||||
|---|---|---|---|---|---|
| Imaj | Nimewo Pati | Deskripsyon | Manifakti | Jwenn yon Quote | |
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IDD05G120C5 | INFINEON | |||
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IDD05-12S4U | CHINFA | |||
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IDD06E60BUMA1 | DIODE GP 600V 14.7A TO252-3 | Infineon Technologies | ||
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IDD06SG60CXTMA2 | DIODE SIL CARB 600V 6A TO252-3 | Infineon Technologies | ||
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IDD05SG60C | DIODE SIL CARB 600V 5A TO252-3 | Infineon Technologies | ||
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IDD06SG60CHUMA1 | DIODE SCHOTTKY 600V 6A TO252-3 | Infineon Technologies | ||
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IDD05SG60CXTMA1 | DIODE SIL CARB 600V 5A TO252-3 | Infineon Technologies | ||
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IDD09SG60CXTMA2 | DIODE SIL CARB 600V 9A TO252-3 | Infineon Technologies | ||
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IDD09SG60CXTMA1 | DIODE SIL CARB 600V 9A TO252-3 | Infineon Technologies | ||
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IDD08SG60C IC | INFINEON TO-252 | INFINEON | ||
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IDD06E60 D06E60 | INFINEON TO-252 | INFINEON | ||
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IDD05SG60CXTMA2 | DIODE SIL CARB 600V 5A TO252-3 | Infineon Technologies | ||
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IDD05-12S5U | CHINFA | |||
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IDD09E60 MOS | INFINEON TO-252 | INFINEON | ||
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IDD08SG60CXTMA1 | DIODE SIL CARB 600V 8A TO252-3 | Infineon Technologies | ||
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IDD06E60 | IDD06E60 INFINEON | INFINEON | ||
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IDD09E60BUMA1 | DIODE GP 600V 19.3A TO252-3 | Infineon Technologies | ||
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IDD09E60 | IDD09E60 infineon | infineon | ||
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IDD08SG60CXTMA2 | DIODE SIL CARB 600V 8A TO252-3 | Infineon Technologies | ||
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IDD08SG60C | INFINEON TO-252 | INFINEON | ||
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