SCTW90N65G2V
Nimewo Pati SCTW90N65G2V
Manifakti STMicroelectronics
Deskripsyon SICFET N-CH 650V 90A HIP247
Kantite ki disponib 478 pcs in stock
ECAD modèl
Datasheets 1.SCTW90N65G2V.pdf2.SCTW90N65G2V.pdf3.SCTW90N65G2V.pdf
SCTW90N65G2V Price Mande Pri & Tan Lead Online
or Email us: Info@ariat-tech.com
Enfòmasyon teknik nan SCTW90N65G2V
Nimewo Pati fabrikan an SCTW90N65G2V Kategori  
Manifakti ST Deskripsyon SICFET N-CH 650V 90A HIP247
Pake / Ka HiP247™ Kantite ki disponib 478 pcs
Vgs (th) (Max) @ Id 5V @ 250µA Vgs (Max) +22V, -10V
Teknoloji SiCFET (Silicon Carbide) Founisè Aparèy pake HiP247™
Seri - Rds Sou (Max) @ Id, Vgs 25mOhm @ 50A, 18V
Dissipasyon pouvwa (Max) 390W (Tc) Pake / Ka TO-247-3
Pakèt Tube Operating Tanperati -55°C ~ 200°C (TJ)
Mounting Kalite Through Hole Kapasite Antre (Ciss) (Max) @ Vds 3300 pF @ 400 V
Pòtay Charge (Qg) (Max) @ Vgs 157 nC @ 18 V Fèt tip N-Channel
FET Feature - Kondwi Voltage (Max Rds sou, Min Rds sou) 18V
Drenaj Sous Voltage (Vdss) 650 V Kouran - Kontini Drain (Id) @ 25 ° C 90A (Tc)
Nimewo pwodwi baz SCTW90  
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