FDA28N50F
Nimewo Pati FDA28N50F
Manifakti onsemi
Deskripsyon MOSFET N-CH 500V 28A TO3PN
Kantite ki disponib 9350 pcs new original in stock.
Demann Stock ak sitasyon
ECAD modèl
Datasheets 1.FDA28N50F.pdf2.FDA28N50F.pdf3.FDA28N50F.pdf4.FDA28N50F.pdf5.FDA28N50F.pdf6.FDA28N50F.pdf7.FDA28N50F.pdf8.FDA28N50F.pdf9.FDA28N50F.pdf
FDA28N50F Price Mande Pri & Tan Lead Online
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Enfòmasyon teknik nan FDA28N50F
Nimewo Pati fabrikan an FDA28N50F Kategori  
Manifakti onsemi Deskripsyon MOSFET N-CH 500V 28A TO3PN
Pake / Ka TO-3PN Kantite ki disponib 9350 pcs
Vgs (th) (Max) @ Id 5V @ 250µA Vgs (Max) ±30V
Teknoloji MOSFET (Metal Oxide) Founisè Aparèy pake TO-3PN
Seri UniFET™ Rds Sou (Max) @ Id, Vgs 175mOhm @ 14A, 10V
Dissipasyon pouvwa (Max) 310W (Tc) Pake / Ka TO-3P-3, SC-65-3
Pakèt Tube Operating Tanperati -55°C ~ 150°C (TJ)
Mounting Kalite Through Hole Kapasite Antre (Ciss) (Max) @ Vds 5387 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 105 nC @ 10 V Fèt tip N-Channel
FET Feature - Kondwi Voltage (Max Rds sou, Min Rds sou) 10V
Drenaj Sous Voltage (Vdss) 500 V Kouran - Kontini Drain (Id) @ 25 ° C 28A (Tc)
Nimewo pwodwi baz FDA28  
DownloadFDA28N50F PDF - EN.pdf
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